型号:  T580N06TOF

功能描述:  

制造商:  Infineon Technologies

封装/外壳：  BG-T4214K0-1

RoHS：  Y

封装：  Tray

RoHS compliant：  yes

Packing Type：  TRAY

Moisture Level：  NA

Configuration：  Electrical Triggered Phase Control Thyristor

VDRM / VRRM [V]：  600.0

VDRM/ VRRM (V)：  600.0 V

Housing：  Disc dia 42mm height 14mm / Ceramic

ITAVM/TC [A/°C] (@180° el sin)：  568/85

rT [mΩ] (@Tvj max) max：  0.4

Tvj [°C] max：  140.0

ITSM：  5500.0A

VT0 [V] (@Tvj max) max：  1.0

∫I2dt [A²s · 103] (@10ms, Tvj max)：  151.0

RthJC [K/kW] (@180° el sin) max：  62.0

RthJC [K/kW] (@180° el sin) max：  62.0

rT [mΩ] (@Tvj max) max：  0.4

Clamping force [kn] min max：  3.0 6.0

ITAVM：  568 (180 ° el sin)

ITAVM/TC [A/°C] (@180° el sin)：  568/85

Tvj [°C] max：  140.0

VT/IT [V/kA] (@Tvj max)：  1.63/1.5

VT0 [V] (@Tvj max) max：  1.0

∫I2dt [A²s · 103] (@10ms, Tvj max)：  151.0

ITSM [A] (@10ms, Tvj max)：  5500.0

VT/IT [V/kA] (@Tvj max)：  1.63/1.5

Clamping force [kn] min max：  3.0 6.0

tq [µs]：  200.0

ITSM [A] (@10ms, Tvj max)：  5500.0

无铅情况/RoHs：  无铅/符合RoHs