型号:  T660N26TOF

功能描述:  

制造商:  Infineon Technologies

封装/外壳：  BG-T5726K-1

封装：  Tray

Moisture Level：  NA

Configuration：  Electrical Triggered Phase Control Thyristor

VDRM / VRRM [V]：  2600.0

VDRM/ VRRM (V)：  2600.0 V

Housing：  Disc dia 58mm height 26mm / Ceramic

ITAVM/TC [A/°C] (@180° el sin)：  659/85

rT [mΩ] (@Tvj max) max：  0.5

Tvj [°C] max：  125.0

ITSM：  11500.0 A

VT0 [V] (@Tvj max) max：  1.0

∫I2dt [A²s · 103] (@10ms, Tvj max)：  660.0

RthJC [K/kW] (@180° el sin) max：  33.0

Clamping force [kn] min max：  10.5 21.0

ITAVM：  659 (180 ° el sin)

VT/IT [V/kA] (@Tvj max)：  2.53/2.85

ITSM [A] (@10ms, Tvj max)：  11500.0

tq [µs]：  300.0

无铅情况/RoHs：  无铅/符合RoHs