型号:  TJ10S04M3L,LXHQ

功能描述:  MOSFET P-CH 40V 10A DPAK

制造商:  Toshiba Semiconductor and Storage

Series:  U-MOSVI

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  P-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  40 V

Current - Continuous Drain (Id) @ 25°C:  10A (Ta)

Drive Voltage (Max Rds On, Min Rds On):  6V, 10V

Rds On (Max) @ Id, Vgs:  44mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:  3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:  19 nC @ 10 V

Vgs (Max):  +10V, -20V

Input Capacitance (Ciss) (Max) @ Vds:  930 pF @ 10 V

FET Feature:  -

Power Dissipation (Max):  27W (Tc)

Operating Temperature:  175°C

Mounting Type:  Surface Mount

Supplier Device Package:  DPAK+

Package / Case:  TO-252-3, DPak (2 Leads + Tab), SC-63