型号:  TK110A65Z,S4X

功能描述:  MOSFET N-CH 650V 24A TO220SIS

制造商:  Toshiba Semiconductor and Storage

Series:  DTMOSVI

Package:  Tube

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  650 V

Current - Continuous Drain (Id) @ 25°C:  24A (Ta)

Drive Voltage (Max Rds On, Min Rds On):  10V

Rds On (Max) @ Id, Vgs:  110mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:  4V @ 1.02mA

Gate Charge (Qg) (Max) @ Vgs:  40 nC @ 10 V

Vgs (Max):  ±30V

Input Capacitance (Ciss) (Max) @ Vds:  2250 pF @ 300 V

FET Feature:  -

Power Dissipation (Max):  45W (Tc)

Operating Temperature:  150°C

Mounting Type:  Through Hole

Supplier Device Package:  TO-220SIS

Package / Case:  TO-220-3 Full Pack