型号:  TK11S10N1L,LXHQ

功能描述:  MOSFET N-CH 100V 11A DPAK

制造商:  Toshiba Semiconductor and Storage

Series:  U-MOSVIII-H

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  100 V

Current - Continuous Drain (Id) @ 25°C:  11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):  4.5V, 10V

Rds On (Max) @ Id, Vgs:  28mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:  2.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:  15 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  850 pF @ 10 V

FET Feature:  -

Power Dissipation (Max):  65W (Tc)

Operating Temperature:  175°C

Mounting Type:  Surface Mount

Supplier Device Package:  DPAK+

Package / Case:  TO-252-3, DPak (2 Leads + Tab), SC-63