型号: TK125V65Z,LQ
功能描述: MOSFET N-CH 650V 24A 5DFN
制造商: Toshiba Semiconductor and Storage
Series: DTMOSVI
Package: Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
FET Feature: -
Power Dissipation (Max): 190W (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (8x8)
Package / Case: 4-VSFN Exposed Pad
联系人:Alien
联系人:李先生
电话:17080955875
联系人:余先生,张先生
电话:13826514222
联系人:颜小姐
电话:13380394549
联系人:朱先生
电话:13723794312
联系人:罗先生
电话:19854773352
联系人:徐小姐
电话:13631670223
联系人:汪小姐
联系人:林先生
电话:15112588250
联系人:李先生
电话:18682147665