型号:  TK200F04N1L,LXGQ

功能描述:  MOSFET N-CH 40V 200A TO220SM

制造商:  Toshiba Semiconductor and Storage

Series:  U-MOSVIII-H

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  40 V

Current - Continuous Drain (Id) @ 25°C:  200A (Ta)

Drive Voltage (Max Rds On, Min Rds On):  6V, 10V

Rds On (Max) @ Id, Vgs:  0.9mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:  3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:  214 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  14920 pF @ 10 V

FET Feature:  -

Power Dissipation (Max):  375W (Tc)

Operating Temperature:  175°C

Mounting Type:  Surface Mount

Supplier Device Package:  TO-220SM(W)

Package / Case:  TO-263-3, D²Pak (2 Leads + Tab), TO-263AB