型号:  TP65H480G4JSG-TR

功能描述:  GANFET N-CH 650V 3.6A 3PQFN

制造商:  Transphorm

Series:  -

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):  650 V

Current - Continuous Drain (Id) @ 25°C:  3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  8V

Rds On (Max) @ Id, Vgs:  560mOhm @ 3.4A, 8V

Vgs(th) (Max) @ Id:  2.8V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:  8 V @ 8 nC

Vgs (Max):  ±18V

Input Capacitance (Ciss) (Max) @ Vds:  400 V @ 760 pF

FET Feature:  -

Power Dissipation (Max):  13.2W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  3-PQFN (5x6)

Package / Case:  3-SMD, Flat Lead