型号:  TPCC8104,L1Q(CM

功能描述:  MOSFET P-CH 30V 20A 8TSON

制造商:  Toshiba Semiconductor and Storage

Series:  U-MOSVI

Package:  Tape & Reel (TR)

FET Type:  P-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  30 V

Current - Continuous Drain (Id) @ 25°C:  20A (Ta)

Drive Voltage (Max Rds On, Min Rds On):  4.5V, 10V

Rds On (Max) @ Id, Vgs:  8.8mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:  2V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:  58 nC @ 10 V

Vgs (Max):  +20V, -25V

Input Capacitance (Ciss) (Max) @ Vds:  2260 pF @ 10 V

FET Feature:  -

Power Dissipation (Max):  700mW (Ta), 27W (Tc)

Operating Temperature:  150°C

Mounting Type:  Surface Mount

Supplier Device Package:  8-TSON Advance (3.3x3.3)

Package / Case:  8-PowerVDFN