型号:  UPA1901TE-T1-AT

功能描述:   Trans MOSFET N-CH 30V 6.5A 6-Pin Thin-Type Mini-Mold T/R

制造商:  Renesas Technology

Current - Continuous Drain (Id) @ 25° C：  6.5A

Drain to Source Voltage (Vdss)：  30V

FET Feature：  Logic Level Gate

FET Type：  MOSFET N-Channel, Metal Oxide

Gate Charge (Qg) @ Vgs：  5.4nC @ 4V

Input Capacitance (Ciss) @ Vds：  470pF @ 10V

Mounting Type：  Surface Mount

Package / Case：  SC-95-6

Power - Max：  200mW

Rds On (Max) @ Id, Vgs：  39 mOhm @ 3.5A, 4.5V

Supplier Device Package：  SC-95-6, Mini Mold Thin

Vgs(th) (Max) @ Id：  1.5V @ 1mA

连续漏极电流：  6.5 A

栅源电压（最大值）：  �12 V

功率耗散：  2 W

安装：  Surface Mount

漏源导通电阻：  0.039 ohm

工作温度范围：  -55C to 150C

封装：  Tape and Reel

引脚数：  6

极性：  N

类型：  Power MOSFET

元件数：  1

工作温度分类：  Military

通道模式：  Enhancement

漏源导通电压：  30 V

弧度硬化：  No