型号:  WG50N65DHWQ

功能描述:  IGBT TRENCH FD ST 650V 91A TO247

制造商:  WeEn Semiconductors

Series:  -

Package:  Tube

IGBT Type:  Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):  650 V

Current - Collector (Ic) (Max):  91 A

Current - Collector Pulsed (Icm):  200 A

Vce(on) (Max) @ Vge, Ic:  2V @ 15V, 50A

Power - Max:  278 W

Switching Energy:  1.7mJ (on), 600µJ (off)

Input Type:  Standard

Gate Charge:  160 nC

Td (on/off) @ 25°C:  66ns/163ns

Test Condition:  400V, 50A, 10Ohm, 15V

Reverse Recovery Time (trr):  105 ns

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Through Hole

Package / Case:  TO-247-3

Supplier Device Package:  TO-247-3