制造商: Infineon
产品种类: MOSFET
RoHS: 详细信息
技术: Si
安装风格: SMD/SMT
封装 / 箱体: SOIC-8
晶体管极性: N-Channel
通道数量: 2 Channel
Vds-漏源极击穿电压: 30 V
Id-连续漏极电流: 8 A
Rds On-漏源导通电阻: 28.2 mOhms
Vgs - 栅极-源极电压: - 20 V, + 20 V
最小工作温度: - 55 C
最大工作温度: + 150 C
Pd-功率耗散: 2 W
通道模式: Enhancement
封装: Reel
封装: Cut Tape
商标: Infineon Technologies
配置: Dual
下降时间: 24 ns
高度: 1.75 mm
长度: 4.9 mm
产品类型: MOSFET
上升时间: 27 ns
2500
子类别: MOSFETs
晶体管类型: 2 N-Channel
典型关闭延迟时间: 18 ns
典型接通延迟时间: 9.1 ns
宽度: 3.9 mm
单位重量: 540 mg
DC/DC CONVERSION plays a critical role in todays’ applications such as desktop and notebook computers, consumer equipment e.g. DVD players and set-top boxes or portable electronics, such as PDAs, MP3 players to mention but a few. ALL THESE APPLICATIONS make ever-increasing demands on the internal power conversion; power losses must be reduced and efficiency improved, translating into less heat and a longer battery lifetime. At the same time devices are constantly shrinking in size, increasing the power density. W E C A N H E L P you out. Our OptiMOS®2 power MOSFET technology reduces the resistive and switching loss components significantly. The gate charge – and consequently the “figure-of-merit” of our devices – has become the new industry benchmark. More importantly, the output charge is reduced to extremely low levels, minimizing the total switching losses for a given output current. At the same time, best-in-class power MOSFETs with an on-resistance in the range of 3 mΩ and below, are now possible, making new circuit concepts and applications possible. New packages like our SSO8 show strongly reduced package resistances, and – furthermore – parasitic inductances. Coupled with excellent thermal performance, our new 30 V OptiMOS®2 products allow for new levels of power conversion efficiency especially in portable applications. For applications with space constraints, a large product portfolio of devices in smaller packages is available, including dual and complementary devices.