C3M0015065K 100%原装进口正品 公司现货库存 欢迎来电咨询！
C3M0015065KSilicon Carbide Power MOSFETC3MTM MOSFET TechnologyN-Channel Enhancement Mode
Features• C3MTM SiC MOSFET technology• Optimized package with separate driver source pin• 8mm of creepage distance between drain and source• High blocking voltage with low on-resistance• High-speed switching with low capacitances• Fast intrinsic diode with low reverse recovery (Qrr)• Halogen free, RoHS compliantBenefits• Reduce switching losses and minimize gate ringing• Higher system efficiency• Reduce cooling requirements• Increase power density• Increase system switching frequencyApplications• EV chargers• Solar inverters• UPS• SMPS• DC/DC convertersPackagePart Number Package MarkingC3M0015065K TO 247-4 C3M0015065K Drain(Pin 1, TAB) PowerSource(Pin 2) DriverSource(Pin 3)Gate(Pin 4)Maximum Ratings (TC=25˚C, unless otherwise specified)Symbol Parameter Value Unit NoteVDSmax Drain - Source Voltage 650 VVGSmax Gate - Source voltage -8/+19 V Note 1IDContinuous Drain Current, VGS = 15 V, TC = 25˚C 120A Fig. 19Note 2 Continuous Drain Current, VGS = 15 V, TC = 100˚C 96ID(pulse) Pulsed Drain Current, Pulse width tP limited by Tjmax 418 APD Power Dissipation, TC=25˚C, TJ = 175 ˚C 416 W Fig. 20TJ , Tstg Operating Junction and Storage Temperature -40 to+175 ˚CTL Solder Temperature, 1.6mm (0.063”) from case for 10s 260 ˚CMd Mounting Torque, (M3 or 6-32 screw) 18.8Nmlbf-inNote (1): Recommended turn off / turn on gate voltage VGS - 4V...0V / +15V