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EasyPACK™ModulmitCoolSiC™TrenchMOSFETundPressFIT/NTC
EasyPACK™modulewithCoolSiC™TrenchMOSFETandPressFIT/NTC
VorläufigeDaten/PreliminaryData-VD = 1200VID nom = 50A / IDRM = 100APotentielleAnwendungen PotentialApplications• AnwendungenmithohenSchaltfrequenzen • HighFrequencySwitchingapplication• DC/DCWandler • DC/DCconverter• Schweißen • WeldingElektrischeEigenschaften ElectricalFeatures• HoheStromdichte • Highcurrentdensity• NiederinduktivesDesign • Lowinductivedesign• NiedrigeSchaltverluste • LowswitchinglossesMechanischeEigenschaften MechanicalFeatures• IntegrierterNTCTemperaturSensor • IntegratedNTCtemperaturesensor• PressFITVerbindungstechnik • PressFITcontacttechnology• Robuste Montage durch integrierte •BefestigungsklammernRugged mounting due to integrated mounting clamps
MOSFET/MOSFETHöchstzulässigeWerte/MaximumRatedValuesDrain-Source-SpannungDrain-sourcevoltage Tvj = 25°C VDSS 1200 VDrain-GleichstromDCdraincurrent Tvj = 175°C, VGS = 15 V TH = 60°C ID nom 50 AGepulsterDrainstromPulseddraincurrentverifiziertdurchDesign,tplimitiertdurchTvjmaxverifiedbydesign,tplimitedbyTvjmaxID pulse 100 AGate-SourceSpannungGate-sourcevoltage VGSS -10 / 20 VCharakteristischeWerte/CharacteristicValues min. typ. max.EinschaltwiderstandDrain-sourceonresistanceID = 50 AVGS = 15 V RDS on22,529,533,0mΩTvj = 25°CTvj = 125°CTvj = 150°CGate-SchwellenspannungGatethresholdvoltageID=20,0mA,VDS=VGS,Tvj=25°C(testedafter1mspulseatVGS=+20V) VGS(th) 3,45 4,50 5,55 VGesamtGateladungTotalgatecharge VGS = -5 V / 15 V, VDS = 800 V QG 0,124 µCInternerGatewiderstandInternalgateresistor Tvj = 25°C RGint 2,0 ΩEingangskapazitätInputcapacitancef = 1 MHz, Tvj = 25°CVDS = 800 V, VGS = 0 V, VAC = 25 mV Ciss 3,68 nFAusgangskapazitätOutputcapacitancef = 1 MHz, Tvj = 25°CVDS = 800 V, VGS = 0 V, VAC = 25 mV Coss 0,22 nFRückwirkungskapazitätReversetransfercapacitancef = 1 MHz, Tvj = 25°CVDS = 800 V, VGS = 0 V, VAC = 25 mV Crss 0,028 nFCOSSSpeicherenergieCOSSstoredenergyTvj = 25°CVDS = 800 V, VGS = -5 V / 15 V Eoss 88,0 µJDrain-Source-ReststromZerogatevoltagedraincurrent VDS = 1200 V, VGS = -5 V Tvj = 25°C IDSS 0,20 210 µAGate-Source-ReststromGate-sourceleakagecurrentVDS = 0 VTvj = 25°C IGSS400 nA VGS = 20 VVGS = -10 VEinschaltverzögerungszeit,induktiveLastTurnondelaytime,inductiveloadID = 50 A, VDS = 600 VVGS = -5 V / 15 VRGon = 1,00 Ωtd on14,314,314,3nsTvj = 25°CTvj = 125°CTvj = 150°CAnstiegszeit,induktiveLastRisetime,inductiveloadID = 50 A, VDS = 600 VVGS = -5 V / 15 VRGon = 1,00 Ωtr8,408,408,40nsTvj = 25°CTvj = 125°CTvj = 150°CAbschaltverzögerungszeit,induktiveLastTurnoffdelaytime,inductiveloadID = 50 A, VDS = 600 VVGS = -5 V / 15 VRGoff = 1,00 Ωtd off49,449,449,4nsTvj = 25°CTvj = 125°CTvj = 150°CFallzeit,induktiveLastFalltime,inductiveloadID = 50 A, VDS = 600 VVGS = -5 V / 15 VRGoff = 1,00 Ωtf11,511,511,5nsTvj = 25°CTvj = 125°CTvj = 150°CEinschaltverlustenergieproPulsTurn-onenergylossperpulseID = 50 A, VDS = 600 V, Lσ = 35 nHdi/dt = 8,30 kA/µs (Tvj = 150°C)VGS = -5 V / 15 V, RGon = 1,00 ΩEon0,430,430,43mJTvj = 25°CTvj = 125°CTvj = 150°CAbschaltverlustenergieproPulsTurn-offenergylossperpulseID = 50 A, VDS = 600 V, Lσ = 35 nHdu/dt = 46,2 kV/µs (Tvj = 150°C)VGS = -5 V / 15 V, RGoff = 1,00 ΩEoff0,110,110,11mJTvj = 25°CTvj = 125°CTvj = 150°CWärmewiderstand,ChipbisKühlkörperThermalresistance,junctiontoheatsink proMOSFET/perMOSFET RthJH 0,900 K/WTemperaturimSchaltbetriebTemperatureunderswitchingconditions Tvj op -40 150 °CBodyDiode/BodydiodeHöchstzulässigeWerte/MaximumRatedValuesBodyDiode-GleichstromDCbodydiodeforwardcurrent Tvj = 175°C, VGS = -5 V TH = 60°C ISD 16 ACharakteristischeWerte/CharacteristicValues min. typ. max.DurchlassspannungForwardvoltageISD = 50 A, VGS = -5 VISD = 50 A, VGS = -5 VISD = 50 A, VGS = -5 VVSD4,604,354,