型号:  3N163 DIE

功能描述:  P-CHANNEL, SINGLE ENHANCEMENT MO

制造商:  Linear Integrated Systems, Inc.

Series:  -

Package:  Tray

FET Type:  P-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  40 V

Current - Continuous Drain (Id) @ 25°C:  50mA

Drive Voltage (Max Rds On, Min Rds On):  20V

Rds On (Max) @ Id, Vgs:  250Ohm @ 100µA, 20V

Vgs(th) (Max) @ Id:  5V @ 10µA

Gate Charge (Qg) (Max) @ Vgs:  -

Vgs (Max):  -6.5V

Input Capacitance (Ciss) (Max) @ Vds:  3.5 pF @ 15 V

FET Feature:  -

Power Dissipation (Max):  -

Operating Temperature:  -

Mounting Type:  Surface Mount

Supplier Device Package:  Die

Package / Case:  Die