型号:  APT10M11LVRG

功能描述:  MOSFET N-CH 100V 100A TO264

制造商:  Microchip Technology

Series:  POWER MOS V®

Package:  Tube

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  100 V

Current - Continuous Drain (Id) @ 25°C:  100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  10V

Rds On (Max) @ Id, Vgs:  11mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:  4V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs:  450 nC @ 10 V

Vgs (Max):  ±30V

Input Capacitance (Ciss) (Max) @ Vds:  10300 pF @ 25 V

FET Feature:  -

Power Dissipation (Max):  520W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Through Hole

Supplier Device Package:  TO-264 (L)

Package / Case:  TO-264-3, TO-264AA