型号:  BSM180C12P3C202

功能描述:  SICFET N-CH 1200V 180A MODULE

制造商:  Rohm Semiconductor

Series:  -

Package:  Bulk

FET Type:  N-Channel

Technology:  SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):  1200 V

Current - Continuous Drain (Id) @ 25°C:  180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  -

Rds On (Max) @ Id, Vgs:  -

Vgs(th) (Max) @ Id:  5.6V @ 50mA

Gate Charge (Qg) (Max) @ Vgs:  -

Vgs (Max):  +22V, -4V

Input Capacitance (Ciss) (Max) @ Vds:  9000 pF @ 10 V

FET Feature:  -

Power Dissipation (Max):  880W (Tc)

Operating Temperature:  -40°C ~ 150°C (TJ)

Mounting Type:  Chassis Mount

Supplier Device Package:  Module

Package / Case:  Module