型号:  BSS123LT

功能描述:  MOSFET, Power,N-Ch,VDSS 100VDC,RDS(ON) 5 Ohms,ID 0.17A,SOT-23 (TO-236),PD 225mW

制造商:  ON Semiconductor

Channel Type:  N

Configuration:  Single

Dimensions:  3.04 x 1.4 x 1.01 mm

Drain Current:  0.17 A

Drain to Source On Resistance:  6 Ω

Drain to Source Voltage:  100 V

Forward Transconductance:  80 mS

Forward Voltage, Diode:  1.3 V

Gate to Source Voltage:  ±20 V

Height:  0.04" (1.01mm)

Input Capacitance:  20 pF @ 25 V

Length:  0.119" (3.04mm)

Maximum Operating Temperature:  +150 °C

Minimum Operating Temperature:  -55 °C

Mounting Type:  Surface Mount

Number of Elements per Chip:  1

Number of Pins:  3

Package Type:  SOT-23

Polarization:  N-Channel

Power Dissipation:  225 mW

Product Header:  N-Channel Power MOSFET

Series:  BSS Series

Temperature Operating Range:  -55 to +150 °C

Turn Off Delay Time:  40 ns

Turn On Delay Time:  20 ns

Voltage, Breakdown, Drain to Source:  100 V

Width:  0.055" (1.4mm)