型号:  C3M0025065K

功能描述:  GEN 3 650V 25 M SIC MOSFET

制造商:  Cree/Wolfspeed

Series:  C3M™

Package:  Tube

FET Type:  N-Channel

Technology:  SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):  650 V

Current - Continuous Drain (Id) @ 25°C:  97A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  15V

Rds On (Max) @ Id, Vgs:  34mOhm @ 33.5A, 15V

Vgs(th) (Max) @ Id:  3.6V @ 9.22mA

Gate Charge (Qg) (Max) @ Vgs:  112 nC @ 15 V

Vgs (Max):  +19V, -8V

Input Capacitance (Ciss) (Max) @ Vds:  2980 pF @ 600 V

FET Feature:  -

Power Dissipation (Max):  326W (Tc)

Operating Temperature:  -40°C ~ 175°C (TJ)

Mounting Type:  Through Hole

Supplier Device Package:  TO-247-4L

Package / Case:  TO-247-4