型号:  C3M0045065D

功能描述:  GEN 3 650V 45 M SIC MOSFET

制造商:  Cree/Wolfspeed

Series:  C3M™

Package:  Tube

FET Type:  N-Channel

Technology:  SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):  650 V

Current - Continuous Drain (Id) @ 25°C:  49A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  15V

Rds On (Max) @ Id, Vgs:  60mOhm @ 17.6A, 15V

Vgs(th) (Max) @ Id:  3.6V @ 4.84mA

Gate Charge (Qg) (Max) @ Vgs:  63 nC @ 15 V

Vgs (Max):  +19V, -8V

Input Capacitance (Ciss) (Max) @ Vds:  1621 pF @ 600 V

FET Feature:  -

Power Dissipation (Max):  176W (Tc)

Operating Temperature:  -40°C ~ 175°C (TJ)

Mounting Type:  Through Hole

Supplier Device Package:  TO-247-3

Package / Case:  TO-247-3