型号:  C3M0120065J

功能描述:  650V 120M SIC MOSFET

制造商:  Cree/Wolfspeed

Series:  C3M™

Package:  Tube

FET Type:  N-Channel

Technology:  SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):  650 V

Current - Continuous Drain (Id) @ 25°C:  21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  15V

Rds On (Max) @ Id, Vgs:  157mOhm @ 6.76A, 15V

Vgs(th) (Max) @ Id:  3.6V @ 1.86mA

Gate Charge (Qg) (Max) @ Vgs:  26 nC @ 15 V

Vgs (Max):  +19V, -8V

Input Capacitance (Ciss) (Max) @ Vds:  640 pF @ 400 V

FET Feature:  -

Power Dissipation (Max):  86W (Tc)

Operating Temperature:  -40°C ~ 175°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  TO-263-7

Package / Case:  TO-263-8, D²Pak (7 Leads + Tab), TO-263CA