型号:  D650N04T

功能描述:  

制造商:  Infineon Technologies

封装/外壳：  BG-D4214K0-1

RoHS：  Y

封装：  Tray

MXHTS：  85411001

RoHS compliant：  yes

Packing Type：  TRAY

Configuration：  Rectifier Diodes

Housing：  Disc dia 42mm height 14mm / Ceramic

IFSM [A] (@10ms, Tvj max)：  510.0

rT [mΩ] (@Tvj max) max：  0.51

Tvj [°C] max：  180.0

VT0 [V] (@Tvj max) max：  0.7

∫I2dt [A²s · 103] (@10ms, Tvj max)：  130.0

IFAVM/TC [A/°C] (@180° el sin)：  651/100

RthJC [K/kW] (@180° el sin) max：  81.0

RthJC [K/kW] (@180° el sin) max：  81.0

VRRM max：  400.0V

rT [mΩ] (@Tvj max) max：  0.51

Clamping force [kn] min max：  2.6 4.6

Tvj [°C] max：  180.0

IFAVM/Tc：  651/100 (180 ° el sin)

VT0 [V] (@Tvj max) max：  0.7

∫I2dt [A²s · 103] (@10ms, Tvj max)：  130.0

IFSM [A] (@10ms, Tvj max)：  510.0

I(FSM) max：  710.0A

IFAVM/TC [A/°C] (@180° el sin)：  651/100

I(FSM) max：  710.0 A

VRRM [V]：  400.0

VF/IF [V/kA] (@Tvj max)：  1.44/1.35

VRRM max：  400.0 V

Clamping force [kn] min max：  2.6 4.6

VF/IF [V/kA] (@Tvj max)：  1.44/1.35

无铅情况/RoHs：  无铅/符合RoHs