型号: G3R30MT12K
功能描述: SIC MOSFET N-CH 90A TO247-4
制造商: GeneSiC Semiconductor
Series: G3R™
Package: Tube
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V
Vgs(th) (Max) @ Id: 2.69V @ 12mA
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V
FET Feature: -
Power Dissipation (Max): 400W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4
Package / Case: TO-247-4
联系人:李先生
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联系人:Alien
联系人:余先生,张先生
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联系人:李
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联系人:张小姐
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联系人:赵小姐
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联系人:王俊杰
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联系人:李先生
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