型号:  IAUT165N08S5N029ATMA1

功能描述:  MOSFET N-CH 80V 165A 8HSOF

制造商:  Infineon Technologies

Series:  OptiMOS™-5

Package:  Tape & Reel (TR)

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  80 V

Current - Continuous Drain (Id) @ 25°C:  165A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  6V, 10V

Rds On (Max) @ Id, Vgs:  2.9mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:  3.8V @ 108µA

Gate Charge (Qg) (Max) @ Vgs:  90 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  6370 pF @ 40 V

FET Feature:  -

Power Dissipation (Max):  167W (Tc)

Operating Temperature:  -55°C ~ 175°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  PG-HSOF-8-1

Package / Case:  8-PowerSFN