型号:  IGC193T120T8RM

功能描述:  

制造商:  Infineon Technologies

封装/外壳：  --

Packing Type：  WAFER SAWN

VDS max：  1200.0V

Technology：  IGBT4 Medium Power

Operating Temperature min max：  -40.0 °C 175.0 °C

VGE(th) min max：  5.3 V 6.3 V

VCE(sat) max：  1.3 V

IC max：  200.0A

RoHS compliant：  yes

Packing Type：  WAFER SAWN

VDS max：  1200.0V

Technology：  IGBT4 Medium Power

Operating Temperature min max：  -40.0 °C 175.0 °C

VCE max：  1200.0 V

VDS max：  1200.0 V

Operating Temperature min max：  -40.0°C 175.0°C

VGE(th) min max：  5.3 V 6.3 V

VCE(sat) max：  1.3 V

VCE max：  1200.0V

VCE(sat) max：  1.3V

IC max：  200.0A

VGE(th) min max：  5.3V 6.3V

IC max：  200.0 A

无铅情况/RoHs：  无铅/符合RoHs