型号:  IGLD60R190D1AUMA1

功能描述:  MOSFET N-CH 600V 10A LSON-8

制造商:  Infineon Technologies

Series:  CoolGaN™

Package:  Tape & Reel (TR)

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  600 V

Current - Continuous Drain (Id) @ 25°C:  10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  -

Rds On (Max) @ Id, Vgs:  -

Vgs(th) (Max) @ Id:  1.6V @ 960µA

Gate Charge (Qg) (Max) @ Vgs:  -

Vgs (Max):  -10V

Input Capacitance (Ciss) (Max) @ Vds:  157 pF @ 400 V

FET Feature:  -

Power Dissipation (Max):  62.5W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  PG-LSON-8-1

Package / Case:  8-LDFN Exposed Pad