型号:  IKW30N60DTPXKSA1

功能描述:  IGBT 晶体管 The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior.

制造商:  Infineon Technologies

制造商:  Infineon

产品种类:  IGBT 晶体管

RoHS:  是

技术:  Si

封装 / 箱体:  TO-247-3

安装风格:  Through Hole

配置:  Single

集电极—发射极最大电压 VCEO:  600 V

集电极—射极饱和电压:  1.6 V

栅极/发射极最大电压:  20 V

在25 C的连续集电极电流:  53 A

Pd-功率耗散:  200 W

最小工作温度:  - 40 C

最大工作温度:  + 175 C

系列:  600V TRENCHSTOP

封装:  Tube

商标:  Infineon Technologies

栅极—射极漏泄电流:  100 nA

产品类型:  IGBT Transistors

工厂包装数量:  240

子类别:  IGBTs

商标名:  TRENCHSTOP

零件号别名:  IKW30N60DTP SP001379684