型号:  IMBG120R030M1HXTMA1

功能描述:  TRANS SJT N-CH 1.2KV 56A TO263

制造商:  Infineon Technologies

Series:  CoolSiC™

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):  1.2 kV

Current - Continuous Drain (Id) @ 25°C:  56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  -

Rds On (Max) @ Id, Vgs:  41mOhm @ 25A, 18V

Vgs(th) (Max) @ Id:  5.7V @ 11.5mA

Gate Charge (Qg) (Max) @ Vgs:  63 nC @ 18 V

Vgs (Max):  +18V, -15V

Input Capacitance (Ciss) (Max) @ Vds:  2.29 nF @ 800 V

FET Feature:  Standard

Power Dissipation (Max):  300W (Tc)

Operating Temperature:  -55°C ~ 175°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  PG-TO263-7-12

Package / Case:  TO-263-8, D²Pak (7 Leads + Tab), TO-263CA