型号:  IPB025N10N3GE8187ATMA1

功能描述:  MOSFET N-CH 100V 180A TO263-7

制造商:  Infineon Technologies

Series:  OptiMOS™

Package:  Tape & Reel (TR)

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  100 V

Current - Continuous Drain (Id) @ 25°C:  180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  6V, 10V

Rds On (Max) @ Id, Vgs:  2.5mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:  3.5V @ 275µA

Gate Charge (Qg) (Max) @ Vgs:  206 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  14800 pF @ 50 V

FET Feature:  -

Power Dissipation (Max):  300W (Tc)

Operating Temperature:  -55°C ~ 175°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  PG-TO263-7

Package / Case:  TO-263-7, D²Pak (6 Leads + Tab)