型号:  IPD036N04LGATMA1

功能描述:  MOSFET N-CH 40V 90A TO252-31

制造商:  Infineon Technologies

Series:  OptiMOS™ 3

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  40 V

Current - Continuous Drain (Id) @ 25°C:  90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  4.5V, 10V

Rds On (Max) @ Id, Vgs:  3.6mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:  2V @ 45µA

Gate Charge (Qg) (Max) @ Vgs:  78 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  6300 pF @ 20 V

FET Feature:  -

Power Dissipation (Max):  94W (Tc)

Operating Temperature:  -55°C ~ 175°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  PG-TO252-3-11

Package / Case:  TO-252-3, DPak (2 Leads + Tab), SC-63