型号: IPP65R110CFD7XKSA1
功能描述: HIGH POWER_NEW
制造商: Infineon Technologies
Series: CoolMOS™ CFD7
Package: Tube
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
FET Feature: -
Power Dissipation (Max): 114W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3
联系人:罗先生
电话:19854773352
联系人:胡小姐
电话:13724343501
联系人:Alien
联系人:杨先生
电话:13352985419
联系人:李先生
电话:17080955875
联系人:王小姐,刘先生
电话:19147724283
联系人:刘先生
电话:18390902447
联系人:陈小勇
电话:15112380080
联系人:刘先生,李小姐
电话:13510175077
联系人:李阔
电话:13428789181