型号:  IRF100P218AKMA1

功能描述:  MOSFET N-CH 100V 209A TO247AC

制造商:  Infineon Technologies

Series:  StrongIRFET™

Package:  Tube

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  100 V

Current - Continuous Drain (Id) @ 25°C:  209A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  6V, 10V

Rds On (Max) @ Id, Vgs:  1.28mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:  3.8V @ 278µA

Gate Charge (Qg) (Max) @ Vgs:  412 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  24000 pF @ 50 V

FET Feature:  -

Power Dissipation (Max):  3.8W (Ta), 556W (Tc)

Operating Temperature:  -55°C ~ 175°C (TJ)

Mounting Type:  Through Hole

Supplier Device Package:  PG-TO247-3

Package / Case:  TO-247-3