型号:  IRF6216PBF-IR

功能描述:  MOSFET P-CH 150V 2.2A 8SO

制造商:  International Rectifier

Series:  HEXFET®

Package:  Bulk

FET Type:  P-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  150 V

Current - Continuous Drain (Id) @ 25°C:  2.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):  -

Rds On (Max) @ Id, Vgs:  240mOhm @ 1.3A, 10V

Vgs(th) (Max) @ Id:  5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  49 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  1280 pF @ 25 V

FET Feature:  -

Power Dissipation (Max):  2.5W (Ta)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  8-SO

Package / Case:  8-SOIC (0.154", 3.90mm Width)