型号:  IRFR13N20DPBF-IR

功能描述:  MOSFET N-CH 200V 13A DPAK

制造商:  International Rectifier

Series:  HEXFET®

Package:  Bulk

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  200 V

Current - Continuous Drain (Id) @ 25°C:  13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  -

Rds On (Max) @ Id, Vgs:  235mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:  5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  38 nC @ 10 V

Vgs (Max):  ±30V

Input Capacitance (Ciss) (Max) @ Vds:  830 pF @ 25 V

FET Feature:  -

Power Dissipation (Max):  110W (Tc)

Operating Temperature:  -55°C ~ 175°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  D-PAK (TO-252AA)

Package / Case:  TO-252-3, DPak (2 Leads + Tab), SC-63