型号:  IRL40S212ARMA1

功能描述:  MOSFET N-CH 40V 195A D2PAK

制造商:  Infineon Technologies

Series:  HEXFET®, StrongIRFET™

Package:  Tape & Reel (TR)

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  40 V

Current - Continuous Drain (Id) @ 25°C:  195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  4.5V, 10V

Rds On (Max) @ Id, Vgs:  1.9mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:  2.4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:  4.5 V @ 137 nC

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  25 V @ 8320 pF

FET Feature:  -

Power Dissipation (Max):  231W (Tc)

Operating Temperature:  -55°C ~ 175°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  D2PAK (TO-263)

Package / Case:  TO-263-3, D²Pak (2 Leads + Tab), TO-263AB