型号:  MSCSM120AM042CD3AG

功能描述:  PM-MOSFET-SIC-SBD~-D3

制造商:  Microchip Technology

Series:  -

Package:  Box

FET Type:  2 N Channel (Phase Leg)

FET Feature:  Silicon Carbide (SiC)

Drain to Source Voltage (Vdss):  1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:  495A (Tc)

Rds On (Max) @ Id, Vgs:  5.2mOhm @ 240A, 20V

Vgs(th) (Max) @ Id:  2.8V @ 6mA

Gate Charge (Qg) (Max) @ Vgs:  1392nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:  18.1pF @ 1000V

Power - Max:  2.031kW (Tc)

Operating Temperature:  -40°C ~ 175°C (TJ)

Mounting Type:  Chassis Mount

Package / Case:  Module

Supplier Device Package:  D3