型号:  MSCSM120HM50CT3AG

功能描述:  PM-MOSFET-SIC-SBD~-SP3F

制造商:  Microchip Technology

Series:  -

Package:  Tube

FET Type:  4 N-Channel

FET Feature:  Silicon Carbide (SiC)

Drain to Source Voltage (Vdss):  1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:  55A (Tc)

Rds On (Max) @ Id, Vgs:  50mOhm @ 40A, 20V

Vgs(th) (Max) @ Id:  2.7V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:  137nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:  1990pF @ 1000V

Power - Max:  245W (Tc)

Operating Temperature:  -40°C ~ 175°C (TJ)

Mounting Type:  Chassis Mount

Package / Case:  Module

Supplier Device Package:  SP3F