型号:  PMN27UP,115-NXP

功能描述:  MOSFET P-CH 20V 5.7A 6TSOP

制造商:  NXP USA Inc.

Series:  TrenchMOS™

Package:  Bulk

FET Type:  P-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  20 V

Current - Continuous Drain (Id) @ 25°C:  5.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):  -

Rds On (Max) @ Id, Vgs:  32mOhm @ 2.4A, 4.5V

Vgs(th) (Max) @ Id:  950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  31 nC @ 4.5 V

Vgs (Max):  ±8V

Input Capacitance (Ciss) (Max) @ Vds:  2340 pF @ 10 V

FET Feature:  -

Power Dissipation (Max):  540mW (Ta), 6.25W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  6-TSOP

Package / Case:  SC-74, SOT-457