型号:  PMPB08R4VPX

功能描述:  MOSFET P-CH 12V 12A DFN2020M-6

制造商:  Nexperia USA Inc.

Series:  TrenchMOS™

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  P-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  12 V

Current - Continuous Drain (Id) @ 25°C:  12A (Ta)

Drive Voltage (Max Rds On, Min Rds On):  -

Rds On (Max) @ Id, Vgs:  9.6mOhm @ 12A, 4.5V

Vgs(th) (Max) @ Id:  900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  40 nC @ 4.5 V

Vgs (Max):  ±8V

Input Capacitance (Ciss) (Max) @ Vds:  2200 pF @ 6 V

FET Feature:  -

Power Dissipation (Max):  1.9W (Ta), 12.5W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  DFN2020M-6

Package / Case:  6-UDFN Exposed Pad