型号:  RGT8NS65DGC9

功能描述:  IGBT

制造商:  Rohm Semiconductor

Series:  -

Package:  Tube

IGBT Type:  Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):  650 V

Current - Collector (Ic) (Max):  8 A

Current - Collector Pulsed (Icm):  12 A

Vce(on) (Max) @ Vge, Ic:  2.1V @ 15V, 4A

Power - Max:  65 W

Switching Energy:  -

Input Type:  Standard

Gate Charge:  13.5 nC

Td (on/off) @ 25°C:  17ns/69ns

Test Condition:  400V, 4A, 50Ohm, 15V

Reverse Recovery Time (trr):  40 ns

Operating Temperature:  -40°C ~ 175°C (TJ)

Mounting Type:  Through Hole

Package / Case:  TO-262-3 Long Leads, I²Pak, TO-262AA

Supplier Device Package:  TO-262