型号:  RM12N650IP

功能描述:  MOSFET N-CH 650V 11.5A TO251

制造商:  Rectron USA

Series:  -

Package:  Tube

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  650 V

Current - Continuous Drain (Id) @ 25°C:  11.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  10V

Rds On (Max) @ Id, Vgs:  360mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:  4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  -

Vgs (Max):  ±30V

Input Capacitance (Ciss) (Max) @ Vds:  870 pF @ 50 V

FET Feature:  -

Power Dissipation (Max):  101W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Through Hole

Supplier Device Package:  TO-251

Package / Case:  TO-251-3 Stub Leads, IPak