型号:  SCTH70N120G2V-7

功能描述:  SILICON CARBIDE POWER MOSFET 120

制造商:  STMicroelectronics

Series:  -

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):  1200 kV

Current - Continuous Drain (Id) @ 25°C:  90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  18V

Rds On (Max) @ Id, Vgs:  30mOhm @ 50A, 18V

Vgs(th) (Max) @ Id:  4.9V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:  150 nC @ 18 V

Vgs (Max):  +22V, -10V

Input Capacitance (Ciss) (Max) @ Vds:  3540 pF @ 800 V

FET Feature:  -

Power Dissipation (Max):  469W (Tc)

Operating Temperature:  -55°C ~ 175°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  H2PAK-7

Package / Case:  TO-263-8, D²Pak (7 Leads + Tab), TO-263CA