型号: SEMIX653GD176HDC
功能描述: IGBT, 1700 V, 660 A @ 25 DegC, 650 A @ 80 DegC, 1.7 V @ 25 degC
制造商: SEMIKRON
Collector Current: 619 A
Collector to Emitter Shorted Voltage: 1700 V
Collector to Emitter Voltage: 1700 V
Configuration: Array
Continuous Collector Current: 619 A
Dimensions: 149.5 x 163 x 17 mm
Energy Rating: 480 mJ
Gate Capacitance: 39.6 nF
Gate to Emitter Voltage: 20 V
Height: 0.669" (17mm)
Length: 5.885" (149.5mm)
Maximum Operating Temperature: +150 °C
Minimum Operating Temperature: -55 °C
Mounting Type: Screw
Number of Pins: 29
Package Type: SEMIX 33c
Polarity: N-Channel
Primary Type: Si
Product Header: Trench N-Channel IGBT Module
Resistance, Thermal, Junction to Case: 0.054 K/W
Series: IGBT Series
Temperature Operating Range: -55 to +150 °C
Transistor Type: IGBT
Type: Trench
Voltage, Saturation, Collector to Emitter: 1.7 V @ 25°C (Typ.)
Width: 6.417" (163mm)
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