型号:  SEMIX653GD176HDC

功能描述:  IGBT, 1700 V, 660 A @ 25 DegC, 650 A @ 80 DegC, 1.7 V @ 25 degC

制造商:  SEMIKRON

Collector Current:  619 A

Collector to Emitter Shorted Voltage:  1700 V

Collector to Emitter Voltage:  1700 V

Configuration:  Array

Continuous Collector Current:  619 A

Dimensions:  149.5 x 163 x 17 mm

Energy Rating:  480 mJ

Gate Capacitance:  39.6 nF

Gate to Emitter Voltage:  20 V

Height:  0.669" (17mm)

Length:  5.885" (149.5mm)

Maximum Operating Temperature:  +150 °C

Minimum Operating Temperature:  -55 °C

Mounting Type:  Screw

Number of Pins:  29

Package Type:  SEMIX 33c

Polarity:  N-Channel

Primary Type:  Si

Product Header:  Trench N-Channel IGBT Module

Resistance, Thermal, Junction to Case:  0.054 K/W

Series:  IGBT Series

Temperature Operating Range:  -55 to +150 °C

Transistor Type:  IGBT

Type:  Trench

Voltage, Saturation, Collector to Emitter:  1.7 V @ 25°C (Typ.)

Width:  6.417" (163mm)