型号:  SI1013X-T1-E3/BKN

功能描述:  1.8V P-CHANNEL MOSFET W/ESD PROTECT

制造商:  Siliconix / Vishay

Channel Type:  P

Configuration:  Single

Dimensions:  1.7 x 0.95 x 0.8 mm

Drain Current:  -275 mA

Drain to Source On Resistance:  2.7 Ω

Drain to Source Voltage:  -20 V

Forward Transconductance:  0.4 S

Forward Voltage, Diode:  -1.2 V

Gate to Source Voltage:  ±6 V

Height:  0.031" (0.8mm)

Length:  0.066" (1.68mm)

Maximum Operating Temperature:  +150 °C

Minimum Operating Temperature:  -55 °C

Mounting Type:  Surface Mount

Number of Elements per Chip:  1

Number of Pins:  3

Package Type:  SC-89

Power Dissipation:  250 mW

Series:  SI10 Series

Temperature Operating Range:  -55 to +150 °C

Turn Off Delay Time:  35 ns

Turn On Delay Time:  5 ns

Typical Gate Charge @ Vgs:  1500 nC @ -4.5 V

Width:  0.037" (0.95mm)