型号: SI2316BDS-T1-E3/BKN
功能描述: N-CHANNEL 30-V (D-S) MOSFET
制造商: Siliconix / Vishay
Channel Type: N
Configuration: Single
Dimensions: 3.04 x 1.4 x 1.02 mm
Drain Current: 4.5 A
Drain to Source On Resistance: 0.08 Ω
Drain to Source Voltage: 30 V
Fall Time: 35 ns
Forward Transconductance: 6 S
Forward Voltage, Diode: 1.2 V
Gate to Source Voltage: ±20 V
Height: 0.04" (1.02mm)
Input Capacitance: 350 pF @ 15 V
Junction to Ambient Thermal Resistance: 100 °C/W
Length: 0.119" (3.04mm)
Maximum Operating Temperature: +150 °C
Minimum Operating Temperature: -55 °C
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Operating and Storage Temperature: -55 to +150 C
Package Type: TO-236
Polarization: N-Channel
Power Dissipation: 1.66 W
Series: SI23 Series
Temperature Operating Range: -55 to +150 °C
Total Gate Charge: 9.6 nC
Turn Off Delay Time: 17 ns
Turn On Delay Time: 30 ns
Typical Gate Charge @ Vgs: 6.35 nC @ 15 V
Voltage, Breakdown, Drain to Source: 30 V
Width: 0.055" (1.4mm)
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