型号:  SI4459BDY-T1-GE3

功能描述:  MOSFET P-CH 30V 20.5A/27.8A 8SO

制造商:  Vishay Siliconix

Series:  TrenchFET® Gen IV

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  P-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  30 V

Current - Continuous Drain (Id) @ 25°C:  20.5A (Ta), 27.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  4.5V, 10V

Rds On (Max) @ Id, Vgs:  4.9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:  2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  84 nC @ 10 V

Vgs (Max):  +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:  3490 pF @ 15 V

FET Feature:  -

Power Dissipation (Max):  3.1W (Ta), 5.6W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  8-SO

Package / Case:  8-SOIC (0.154", 3.90mm Width)