型号:  SIHD11N80AE-GE3

功能描述:  MOSFET N-CH 800V 8A TO252AA

制造商:  Vishay Siliconix

Series:  E

Package:  Tube

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  800 V

Current - Continuous Drain (Id) @ 25°C:  8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  10V

Rds On (Max) @ Id, Vgs:  450mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:  4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  42 nC @ 10 V

Vgs (Max):  ±30V

Input Capacitance (Ciss) (Max) @ Vds:  804 pF @ 100 V

FET Feature:  -

Power Dissipation (Max):  78W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  TO-252AA

Package / Case:  TO-252-3, DPak (2 Leads + Tab), SC-63