型号:  SIHU2N80AE-GE3

功能描述:  MOSFET N-CH 800V 2.9A TO251AA

制造商:  Vishay Siliconix

Series:  E

Package:  Tube

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  800 V

Current - Continuous Drain (Id) @ 25°C:  2.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  10V

Rds On (Max) @ Id, Vgs:  2.9Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:  4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  10.5 nC @ 10 V

Vgs (Max):  ±30V

Input Capacitance (Ciss) (Max) @ Vds:  180 pF @ 100 V

FET Feature:  -

Power Dissipation (Max):  62.5W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Through Hole

Supplier Device Package:  TO-251AA

Package / Case:  TO-251-3 Short Leads, IPak, TO-251AA