型号:  SIHU5N80AE-GE3

功能描述:  MOSFET N-CH 800V 4.4A TO251AA

制造商:  Vishay Siliconix

Series:  -

Package:  Tube

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  800 V

Current - Continuous Drain (Id) @ 25°C:  4.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  10V

Rds On (Max) @ Id, Vgs:  1.35Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:  4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  16.5 nC @ 10 V

Vgs (Max):  ±30V

Input Capacitance (Ciss) (Max) @ Vds:  321 pF @ 100 V

FET Feature:  -

Power Dissipation (Max):  62.5W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Through Hole

Supplier Device Package:  TO-251AA

Package / Case:  TO-251-3 Short Leads, IPak, TO-251AA