型号:  SIR180DP-T1-RE3

功能描述:  MOSFET N-CH 60V 32.4A/60A PPAK

制造商:  Vishay Siliconix

Series:  TrenchFET® Gen IV

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  60 V

Current - Continuous Drain (Id) @ 25°C:  32.4A (Ta), 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  7.5V, 10V

Rds On (Max) @ Id, Vgs:  2.05mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:  3.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  87 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  4030 pF @ 30 V

FET Feature:  -

Power Dissipation (Max):  5.4W (Ta), 83.3W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  PowerPAK® SO-8

Package / Case:  PowerPAK® SO-8